类别是'category.MOSFETs 晶体管阵列' (10000)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 输入电压-Nom | 配置 | 通道数量 | 模拟 IC - 其他类型 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | 输入电压(最大) | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 控制技术 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 供应电流-最大值(Isup) | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 切换器配置 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 开关频率-最大值 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EFC4618R-P-TR | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 4-XBGA, 4-FCBGA | 4 | 1.84 μs | 150°C TJ | Tape & Reel (TR) | 2015 | e1 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.6W | 4 | Dual | 200 ns | 2 N-Channel (Dual) Common Drain | 25.4nC @ 4.5V | 815ns | 1.77 μs | 12V | Logic Level Gate, 2.5V Drive | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC3028LSDX-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 5.5A 5.8A | 2 | 60.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.2W | DUAL | 鸥翼 | 260 | 30 | AEC-Q101 | 2 | 增强型MOSFET | 9.7 ns | N and P-Channel | SWITCHING | 27m Ω @ 6A, 10V | 3V @ 250μA | 641pF @ 15V | 13.2nC @ 10V | 17.1ns | 30V | N-CHANNEL AND P-CHANNEL | 40.4 ns | 5.8A | 20V | 5.5A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HAT2038R-EL-E | Renesas Electronics America | 数据表 | 133 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 110 ns | 150°C TJ | Tape & Reel (TR) | 2005 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 60V | 2W | 鸥翼 | 260 | 5A | 20 | 8 | 增强型MOSFET | 3W | 11 ns | 2 N-Channel (Dual) | SWITCHING | 58m Ω @ 3A, 10V | 2.2V @ 1mA | 520pF @ 10V | 40ns | 80 ns | 5A | 20V | 5A | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP56D0UV-7 | Diodes Incorporated | 数据表 | 6000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2 | 21.9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 400mW | FLAT | 260 | 30 | AEC-Q101 | Dual | 增强型MOSFET | 400mW | 4.46 ns | 2 P-Channel (Dual) | SWITCHING | 6 Ω @ 100mA, 4V | 1.2V @ 250μA | 50.54pF @ 25V | 0.58nC @ 4V | 6.63ns | 50V | 15 ns | 160mA | 8V | 6Ohm | -50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C674NLT1G | ON Semiconductor | 数据表 | 1500 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | YES | SILICON | 11A Ta 42A Tc | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | FLAT | 未说明 | not_compliant | 未说明 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 3W Ta 37W Tc | 2 N-Channel (Dual) | 14.4m Ω @ 10A, 10V | 2.2V @ 25μA | 640pF @ 25V | 4.7nC @ 4.5V | 60V | 0.0204Ohm | 119A | 60V | 61 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EFC6602R-TR | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE, NOT REC (Last Updated: 1 week ago) | 表面贴装 | 6-XFBGA, FCBGA | 6 | 2 | 150°C TJ | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | EAR99 | 2W | 6 | Dual | 2W | 2 N-Channel (Dual) | 无卤素 | 55nC @ 4.5V | 12V | Logic Level Gate, 2.5V Drive | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN4031SSD-13 | Diodes Incorporated | 数据表 | 360000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 19.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 31mOhm | Matte Tin (Sn) | HIGH RELIABILITY | 1.42W | 鸥翼 | 260 | 40 | DMN4031 | 8 | Dual | 增强型MOSFET | 2.6W | 6.4 ns | 2 N-Channel (Dual) | SWITCHING | 31m Ω @ 6A, 10V | 3V @ 250μA | 945pF @ 20V | 18.6nC @ 10V | 9.7ns | 40V | 3.1 ns | 5.2A | 20V | 7A | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMTH6010LPD-13 | Diodes Incorporated | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 13.1A Ta 47.6A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 2.8W | 未说明 | 未说明 | 2 N-Channel (Dual) | 11m Ω @ 20A, 10V | 3V @ 250μA | 2615pF @ 30V | 40.2nC @ 10V | 60V | 47.6A | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87334Q3DT | Texas Instruments | 数据表 | 150 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 5 days ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 6W | 无铅 | 260 | 1 | 0.65mm | not_compliant | 未说明 | CSD87334 | 12V | 开关控制器 | 2 N-Channel (Dual) Asymmetrical | 24V | 6m Ω @ 12A, 8V | 1.2V @ 250μA | 脉宽调制 | 1260pF @ 15V | 8.3nC @ 4.5V | 20mA | 30V | BUCK | 1500kHz | Standard | 1.05mm | 3.3mm | 3.3mm | 900μm | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC2004VK-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 670mA 530mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 900mOhm | Matte Tin (Sn) | HIGH RELIABILITY | 400mW | DUAL | FLAT | 260 | 40 | DMC2004VK | 6 | 2 | 增强型MOSFET | 1W | 450mW | N and P-Channel | SWITCHING | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 150pF @ 16V | N-CHANNEL AND P-CHANNEL | 670mA | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SH8M24TB1 | ROHM Semiconductor | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 52 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 4.5A 3.5A | 150°C TJ | Tape & Reel (TR) | 2009 | 不用于新设计 | 1 (Unlimited) | 2W | *M24 | 2W | N and P-Channel | 46m Ω @ 4.5A, 10V | 2.5V @ 1mA | 550pF @ 10V | 9.6nC @ 5V | 3.5A | 45V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMA1024NZ | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | 40mg | SILICON | 2 | 18 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 54MOhm | 700mW | 无铅 | 未说明 | 未说明 | 不合格 | Dual | 增强型MOSFET | 1.4W | DRAIN | 5.3 ns | 2 N-Channel (Dual) | SWITCHING | 54m Ω @ 5A, 4.5V | 1V @ 250μA | 500pF @ 10V | 7.3nC @ 4.5V | 2.2ns | 20V | 2.2 ns | 5A | 700mV | 8V | 5A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 750μm | 2mm | 2mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NX3008NBKV,115 | Nexperia USA Inc. | 数据表 | 90000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 400mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | FLAT | 6 | AEC-Q101; IEC-60134 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | 2 N-Channel (Dual) | SWITCHING | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 50pF @ 15V | 0.68nC @ 4.5V | 30V | 0.4A | 30V | METAL-OXIDE SEMICONDUCTOR | 0.39W | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STL8DN6LF6AG | STMicroelectronics | 数据表 | 5000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 32A Tc | -55°C~175°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101, STripFET™ | 活跃 | 1 (Unlimited) | EAR99 | 55W | 未说明 | 未说明 | STL8 | 2 N-Channel (Dual) | 27m Ω @ 9.6A, 10V | 2.5V @ 250μA | 60V | 32A | 1.34nF | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2028UFU-7 | Diodes Incorporated | 数据表 | 18000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-UFDFN Exposed Pad | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | EAR99 | 900mW | 未说明 | 未说明 | 900mW | 2 N-Channel (Dual) Common Drain | 20.2m Ω @ 4.5A, 4.5V | 1V @ 250μA | 887pF @ 10V | 18.4nC @ 8V | 20V | 7.5A | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7905PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SO | 7.8A 8.9A | 2 | 8.1 ns | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 21.8MOhm | 150°C | -55°C | 30V | 2W | 7.8A | IRF7905PBF | Dual | 2W | 2W | 2 N-Channel (Dual) | 21.8mOhm @ 7.8A, 10V | 2.25V @ 25μA | 600pF @ 15V | 6.9nC @ 4.5V | 9.3ns | 30V | 3.4 ns | 8.9A | 1.8V | 20V | 30V | 600pF | 15 ns | 逻辑电平门 | 21.3mOhm | 21.8 mΩ | 1.8 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2008LFU-7 | Diodes Incorporated | 数据表 | 2482 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 6-UFDFN Exposed Pad | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1W | 无铅 | 未说明 | 未说明 | R-PDSO-N6 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1W | 2 N-Channel (Dual) Common Drain | SWITCHING | 5.4m Ω @ 5.5A, 4.5V | 1.5V @ 250A | 1418pF @ 10V | 42.3nC @ 10V | 20V | 14.5A | 0.0096Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN3A06DN8TA | Diodes Incorporated | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 4.9A | 2 | 21.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 35mOhm | Matte Tin (Sn) | 30V | 2.1W | 鸥翼 | 260 | 4.8A | 40 | 8 | 2 | Dual | 增强型MOSFET | 2.1W | 3 ns | 1.8W | 2 N-Channel (Dual) | SWITCHING | 35m Ω @ 9A, 10V | 1V @ 250μA (Min) | 796pF @ 25V | 17.5nC @ 10V | 6.4ns | 9.4 ns | 6.2A | 1V | 20V | 4.9A | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | IPG20N06S2L50AATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | Surface Mount, Wettable Flank | 8-PowerVDFN | 8 | PG-TDSON-8-10 | 20A | 15 ns | -55°C~175°C TJ | Tape & Reel (TR) | 1997 | Automotive, AEC-Q101, OptiMOS™ | 活跃 | 1 (Unlimited) | 175°C | -55°C | 51W | Dual | 51W | 2 N-Channel (Dual) | 50mOhm @ 15A, 10V | 2V @ 19μA | 无卤素 | 560pF @ 25V | 17nC @ 10V | 3ns | 55V | 10 ns | 20A | 20V | 55V | 55V | 560pF | 逻辑电平门 | 50mOhm | 50 mΩ | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLGD3502NT2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | LIFETIME (Last Updated: 1 day ago) | 表面贴装 | 6-VDFN Exposed Pad | YES | 6 | SILICON | 4.3A 3.6A | 2 | 8.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | 60MOhm | Tin (Sn) | 8541.29.00.95 | 1.74W | 260 | 40 | NTLGD3502N | 6 | Dual | 增强型MOSFET | 1.74W | DRAIN | 7 ns | 2 N-Channel (Dual) | 60m Ω @ 4.3A, 4.5V | 2V @ 250μA | 480pF @ 10V | 4nC @ 4.5V | 17.5ns | 17.5 ns | 5.8A | 20V | 4.3A | 20V | 17.2A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMTH6016LSD-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 7.6A Ta | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101 | e3 | 活跃 | EAR99 | Matte Tin (Sn) | 未说明 | 未说明 | 2 N-Channel (Dual) | 19.5m Ω @ 10A, 10V | 2.5V @ 250μA | 864pF @ 30V | 17nC @ 10V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTUD3174NZT5G | ON Semiconductor | 数据表 | 3440 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | SOT-963 | 220mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | 125mW Ta | 2 N-Channel (Dual) | 1.5 Ω @ 100mA, 4.5V | 1V @ 100μA | 12.5pF @ 15V | 20V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SH8M41TB1 | ROHM Semiconductor | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 3.4A 2.6A | 150°C TJ | Tape & Reel (TR) | 2010 | 不用于新设计 | 1 (Unlimited) | 2W | *M41 | 2W | N and P-Channel | 130m Ω @ 3.4A, 10V | 2.5V @ 1mA | 600pF @ 10V | 9.2nC @ 5V | 2.6A | 80V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VT6M1T2CR | ROHM Semiconductor | 数据表 | 32000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | SILICON | 2 | 150°C TJ | Cut Tape (CT) | 1997 | e1 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 锡银铜 | 120mW | DUAL | 260 | 10 | 6 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 120mW | N and P-Channel | SWITCHING | 3.5 Ω @ 100mA, 4.5V | 1V @ 100μA | 7.1pF @ 10V | 20V | N-CHANNEL AND P-CHANNEL | 100mA | 0.1A | 4.2Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.2V Drive | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FF11MR12W1M1B11BOMA1 | Infineon Technologies | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 底座安装 | Module | NO | AG-EASY1BM-2 | 2 | 64.3 ns | -40°C~150°C TJ | Tray | 2008 | CoolSiC™+ | 活跃 | 不适用 | 18 | EAR99 | UPPER | UNSPECIFIED | 未说明 | 未说明 | R-XUFM-X18 | 2 | 增强型MOSFET | 20mW | ISOLATED | 25.1 ns | 2 N-Channel (Dual) | SWITCHING | 11m Ω @ 100A, 15V | 5.55V @ 40mA | 7950pF @ 800V | 250nC @ 15V | 1200V 1.2kV | 100A | 20V | METAL-OXIDE SEMICONDUCTOR | Silicon Carbide (SiC) | 12.35mm | ROHS3 Compliant |
EFC4618R-P-TR
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMC3028LSDX-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
HAT2038R-EL-E
Renesas Electronics America
分类:Transistors - FETs, MOSFETs - Arrays
DMP56D0UV-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
3.435070
NVMFD5C674NLT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
19.543850
EFC6602R-TR
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMN4031SSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
6.364357
DMTH6010LPD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
11.387485
CSD87334Q3DT
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
11.568417
DMC2004VK-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
SH8M24TB1
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDMA1024NZ
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NX3008NBKV,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
2.639173
STL8DN6LF6AG
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
DMN2028UFU-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
5.000498
IRF7905PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
DMN2008LFU-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
14.631612
ZXMN3A06DN8TA
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
2.414605
IPG20N06S2L50AATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
NTLGD3502NT2G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMTH6016LSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
NTUD3174NZT5G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SH8M41TB1
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
VT6M1T2CR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FF11MR12W1M1B11BOMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
